Contamination at Samsung plant caused DRAM defects - Latest Tech, Mobile News, Gadgets & Reviews Update |Techbrinks

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Monday, 11 November 2019

Contamination at Samsung plant caused DRAM defects


Business Korea reports that the contamination happened at Samsung Electronics’ Giheung Plant in Korea. A 200mm wafer fab, rather than one that produces more modern 300mm diameter wafers, was impacted. This fab is used to produce the first-generation 10nm (1x nm) DRAM products.

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